Publications

@article{,
title = {Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation},
author = {J Klein and M Lorke and M Florian and F Sigger and L Sigl and S Rey and J Wierzbowski and J Cerne and K M\"{u}ller and E Mitterreiter and P Zimmermann and T Taniguchi and K Watanabe and U Wurstbauer and M Kaniber and M Knap and R Schmidt and J J Finley and A W Holleitner},
url = {https://doi.org/10.1038/s41467-019-10632-z},
doi = {10.1038/s41467-019-10632-z},
issn = {2041-1723},
year = {2019},
date = {2019-06-21},
journal = {Nature Communications},
volume = {10},
number = {1},
pages = {2755},
abstract = {Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum photonic technologies. The ability to tailor quantum emitters via site-selective defect engineering is essential for realizing scalable architectures. However, a major difficulty is that defects need to be controllably positioned within the material. Here, we overcome this challenge by controllably irradiating monolayer MoS2 using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion exposed MoS2 flake with high-quality hBN reveals spectrally narrow emission lines that produce photons in the visible spectral range. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron\textendashhole complexes at defect states generated by the local helium ion exposure. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and interacting exciton lattices that may allow the exploration of Hubbard physics.},
keywords = {Foundry Inorganic},
pubstate = {published},
tppubtype = {article}
}

@article{,
title = {Cu9.1Te4Cl3: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity},
author = {A Vogel and T Miller and C Hoch and M Jakob and O Oeckler and T Nilges},
url = {https://doi.org/10.1021/acs.inorgchem.9b00453},
doi = {10.1021/acs.inorgchem.9b00453},
issn = {0020-1669},
year = {2019},
date = {2019-05-06},
journal = {Inorganic Chemistry},
volume = {58},
number = {9},
pages = {6222-6230},
abstract = {Cu9.1Te4Cl3 is a new polymorphic compound in the class of coinage metal polytelluride halides. Copper is highly mobile, which results in multiple order\textendashdisorder phase transitions in a limited temperature interval from 240 to 370 K. Mainly as a consequence of thermal transport properties, the compound’s thermoelectric figure of merit reaches values up to ZT = 0.15 in the temperature range between room temperature and 523 K. Its structure is closely related to that of Ag10Te4Br3, another coinage metal polytelluride halide, which represents the first p\textendashn\textendashp-switchable semiconductor approachable by a simple temperature change. The title compound outperforms Ag10Te4Br3 in terms of thermoelectric properties by 1 order of magnitude and therefore acts as a link between the class of p\textendashn\textendashp compounds and thermoelectric materials.},
keywords = {Foundry Inorganic},
pubstate = {published},
tppubtype = {article}
}

@article{,
title = {Flexible and Ultrasoft Inorganic 1D Semiconductor and Heterostructure Systems Based on SnIP},
author = {C Ott and F Reiter and M Baumgartner and M Pielmeier and A Vogel and P Walke and S Burger and M Ehrenreich and G Kieslich and D Daisenberger and J Armstrong and U K Thakur and P Kumar and S Chen and D Donadio and L S Walter and R T Weitz and K Shankar and T Nilges},
url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201900233},
doi = {10.1002/adfm.201900233},
issn = {1616-301X},
year = {2019},
date = {2019-03-13},
journal = {Advanced Functional Materials},
volume = {29},
number = {18},
pages = {1900233},
abstract = {Abstract Low dimensionality and high flexibility are key demands for flexible electronic semiconductor devices. SnIP, the first atomic-scale double helical semiconductor combines structural anisotropy and robustness with exceptional electronic properties. The benefit of the double helix, combined with a diverse structure on the nanoscale, ranging from strong covalent bonding to weak van der Waals interactions, and the large structure and property anisotropy offer substantial potential for applications in energy conversion and water splitting. It represents the next logical step in downscaling the inorganic semiconductors from classical 3D systems, via 2D semiconductors like MXenes or transition metal dichalcogenides, to the first downsizeable, polymer-like atomic-scale 1D semiconductor SnIP. SnIP shows intriguing mechanical properties featuring a bulk modulus three times lower than any IV, III-V, or II-VI semiconductor. In situ bending tests substantiate that pure SnIP fibers can be bent without an effect on their bonding properties. Organic and inorganic hybrids are prepared illustrating that SnIP is a candidate to fabricate flexible 1D composites for energy conversion and water splitting applications. SnIP@C3N4 hybrid forms an unusual soft material core\textendashshell topology with graphenic carbon nitride wrapping around SnIP. A 1D van der Waals heterostructure is formed capable of performing effective water splitting.},
keywords = {Foundry Inorganic},
pubstate = {published},
tppubtype = {article}
}