| 31. | Al M F Fattah, M R Amin, M Mallmann, S Kasap, W Schnick, A Moewes Electronic structure investigation of wide band gap semiconductors—Mg2PN3 and Zn2PN3: experiment and theory Journal Article Journal of Physics: Condensed Matter, 32 (40), pp. 405504, 2020, ISSN: 0953-8984 1361-648X. Abstract | Links | Tags: Foundry Inorganic, Solid-Solid @article{, title = {Electronic structure investigation of wide band gap semiconductors\textemdashMg2PN3 and Zn2PN3: experiment and theory}, author = {Al M F Fattah and M R Amin and M Mallmann and S Kasap and W Schnick and A Moewes}, url = {http://dx.doi.org/10.1088/1361-648X/ab8f8a}, doi = {10.1088/1361-648x/ab8f8a}, issn = {0953-8984 1361-648X}, year = {2020}, date = {2020-07-06}, journal = {Journal of Physics: Condensed Matter}, volume = {32}, number = {40}, pages = {405504}, abstract = {The research on nitridophosphate materials has gained significant attention in recent years due to the abundance of elements like Mg, Zn, P, and N. We present a detailed study of band gap and electronic structure of M2PN3 (M = Mg, Zn), using synchrotron-based soft x-ray spectroscopy measurements as well as density functional theory (DFT) calculations. The experimental N K-edge x-ray emission spectroscopy (XES) and x-ray absorption spectroscopy (XAS) spectra are used to estimate the band gaps, which are compared with our calculations along with the values available in literature. The band gap, which is essential for electronic device applications, is experimentally determined for the first time to be 5.3 ± 0.2 eV and 4.2 ± 0.2 eV for Mg2PN3 and Zn2PN3, respectively. The experimental band gaps agree well with our calculated band gaps of 5.4 eV for Mg2PN3 and 3.9 eV for Zn2PN3, using the modified Becke\textendashJohnson (mBJ) exchange potential. The states that contribute to the band gap are investigated with the calculated density of states especially with respect to two non-equivalent N sites in the structure. The calculations and the measurements predict that both materials have an indirect band gap. The wide band gap of M2PN3 (M = Mg, Zn) could make it promising for the application in photovoltaic cells, high power RF applications, as well as power electronic devices.}, keywords = {Foundry Inorganic, Solid-Solid}, pubstate = {published}, tppubtype = {article} } The research on nitridophosphate materials has gained significant attention in recent years due to the abundance of elements like Mg, Zn, P, and N. We present a detailed study of band gap and electronic structure of M2PN3 (M = Mg, Zn), using synchrotron-based soft x-ray spectroscopy measurements as well as density functional theory (DFT) calculations. The experimental N K-edge x-ray emission spectroscopy (XES) and x-ray absorption spectroscopy (XAS) spectra are used to estimate the band gaps, which are compared with our calculations along with the values available in literature. The band gap, which is essential for electronic device applications, is experimentally determined for the first time to be 5.3 ± 0.2 eV and 4.2 ± 0.2 eV for Mg2PN3 and Zn2PN3, respectively. The experimental band gaps agree well with our calculated band gaps of 5.4 eV for Mg2PN3 and 3.9 eV for Zn2PN3, using the modified Becke–Johnson (mBJ) exchange potential. The states that contribute to the band gap are investigated with the calculated density of states especially with respect to two non-equivalent N sites in the structure. The calculations and the measurements predict that both materials have an indirect band gap. The wide band gap of M2PN3 (M = Mg, Zn) could make it promising for the application in photovoltaic cells, high power RF applications, as well as power electronic devices. |
| 30. | L Hüttenhofer, F Eckmann, A Lauri, J Cambiasso, E Pensa, Y Li, E Cortés, I D Sharp, S A Maier Anapole Excitations in Oxygen-Vacancy-Rich TiO2–x Nanoresonators: Tuning the Absorption for Photocatalysis in the Visible Spectrum Journal Article ACS Nano, 14 (2), pp. 2456-2464, 2020, ISSN: 1936-0851. Links | Tags: Foundry Inorganic @article{, title = {Anapole Excitations in Oxygen-Vacancy-Rich TiO2\textendashx Nanoresonators: Tuning the Absorption for Photocatalysis in the Visible Spectrum}, author = {L H\"{u}ttenhofer and F Eckmann and A Lauri and J Cambiasso and E Pensa and Y Li and E Cort\'{e}s and I D Sharp and S A Maier}, url = {https://doi.org/10.1021/acsnano.9b09987}, doi = {10.1021/acsnano.9b09987}, issn = {1936-0851}, year = {2020}, date = {2020-02-25}, journal = {ACS Nano}, volume = {14}, number = {2}, pages = {2456-2464}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 29. | V Giegold, L Lange, R Ciesielski, A Hartschuh Non-linear Raman scattering intensities in graphene Journal Article Nanoscale, 2020, ISSN: 2040-3364. Abstract | Links | Tags: Foundry Inorganic @article{, title = {Non-linear Raman scattering intensities in graphene}, author = {V Giegold and L Lange and R Ciesielski and A Hartschuh}, url = {http://dx.doi.org/10.1039/C9NR10654E}, doi = {10.1039/C9NR10654E}, issn = {2040-3364}, year = {2020}, date = {2020-02-18}, journal = {Nanoscale}, abstract = {We show that the Raman scattering signals of the two dominant Raman bands G and 2D of graphene sensitively depend on the laser intensity in opposite ways. High electronic temperatures reached for pulsed laser excitation lead to an asymmetric Fermi\textendashDirac distribution at the different optically resonant states contributing to Raman scattering. This results in a partial Pauli blocking of destructively interfering quantum pathways for G band scattering, which is observed as a super-linear increase of the G band intensity with laser power. The 2D band, on the other hand, exhibits sub-linear intensity scaling due to the blocking of constructively interfering contributions. The opposite intensity dependencies of the two bands are found to reduce the observed 2D/G ratio, a key quantity used for characterizing graphene samples, by more than factor two for electronic temperatures around 3000 K.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } We show that the Raman scattering signals of the two dominant Raman bands G and 2D of graphene sensitively depend on the laser intensity in opposite ways. High electronic temperatures reached for pulsed laser excitation lead to an asymmetric Fermi–Dirac distribution at the different optically resonant states contributing to Raman scattering. This results in a partial Pauli blocking of destructively interfering quantum pathways for G band scattering, which is observed as a super-linear increase of the G band intensity with laser power. The 2D band, on the other hand, exhibits sub-linear intensity scaling due to the blocking of constructively interfering contributions. The opposite intensity dependencies of the two bands are found to reduce the observed 2D/G ratio, a key quantity used for characterizing graphene samples, by more than factor two for electronic temperatures around 3000 K. |
| 28. | D Ruhstorfer, S Mejia, M Ramsteiner, M Döblinger, H Riedl, J J Finley, G Koblmüller Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy Journal Article Applied Physics Letters, 116 (5), pp. 052101, 2020. Links | Tags: Foundry Inorganic, Molecularly-Functionalized @article{, title = {Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy}, author = {D Ruhstorfer and S Mejia and M Ramsteiner and M D\"{o}blinger and H Riedl and J J Finley and G Koblm\"{u}ller}, url = {https://aip.scitation.org/doi/abs/10.1063/1.5134687}, doi = {10.1063/1.5134687}, year = {2020}, date = {2020-02-04}, journal = {Applied Physics Letters}, volume = {116}, number = {5}, pages = {052101}, keywords = {Foundry Inorganic, Molecularly-Functionalized}, pubstate = {published}, tppubtype = {article} } |
| 27. | O E O Zeman, Von F O Rohr, L Neudert, W Schnick Facile One-step Synthesis of Zn1-xMnxSiN2 Nitride Semiconductor Solid Solutions via Solid-state Metathesis Reaction Journal Article Zeitschrift Fur Anorganische Und Allgemeine Chemie, 2020, ISSN: 0044-2313. Links | Tags: Foundry Inorganic @article{, title = {Facile One-step Synthesis of Zn1-xMnxSiN2 Nitride Semiconductor Solid Solutions via Solid-state Metathesis Reaction}, author = {O E O Zeman and Von F O Rohr and L Neudert and W Schnick}, url = {<Go to ISI>://WOS:000510472600001}, doi = {10.1002/zaac.201900315}, issn = {0044-2313}, year = {2020}, date = {2020-02-03}, journal = {Zeitschrift Fur Anorganische Und Allgemeine Chemie}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 26. | L Polavarapu, S Paul, E Bladt, A F Richter, M Döblinger, Y Tong, H Huang, A Dey, S Bals, T Debnath, J Feldmann Manganese Doping Induced Quantum Confinement within Host Perovskite Nanocrystals through Ruddlesden-Popper Defects Journal Article Angewandte Chemie International Edition, n/a (n/a), 2020, ISSN: 1433-7851. Abstract | Links | Tags: Foundry Inorganic @article{, title = {Manganese Doping Induced Quantum Confinement within Host Perovskite Nanocrystals through Ruddlesden-Popper Defects}, author = {L Polavarapu and S Paul and E Bladt and A F Richter and M D\"{o}blinger and Y Tong and H Huang and A Dey and S Bals and T Debnath and J Feldmann}, url = {https://doi.org/10.1002/anie.201914473}, doi = {10.1002/anie.201914473}, issn = {1433-7851}, year = {2020}, date = {2020-01-30}, journal = {Angewandte Chemie International Edition}, volume = {n/a}, number = {n/a}, abstract = {The concept of doping Mn 2+ ions into II-VI semiconductor nanocrystals (NCs) has recently extended to perovskite NCs. To date, most studies on Mn 2+ doped NCs focus on enhancing the emission related to the Mn 2 + dopant via an energy transfer mechanism. In this work, we found that the doping of Mn 2+ ions into CsPbCl 3 NCs not only results in a Mn 2+ -related orange emission, but also strongly influences the excitonic properties of the host NCs. We observe for the first time that Mn 2+ doping leads to the formation of Ruddlesden-Popper (R.P.) defects and thus induces quantum confinement within the host NCs. We find that a slight doping with Mn 2+ ions improves the size distribution of the NCs, which results in a prominent excitonic peak. However, with increasing the Mn 2+ concentration, the number of R.P. planes increases leading to smaller single crystal domains. The thus enhanced confinement and crystal inhomogeneity cause a gradual blue shift and broadening of the excitonic transition, respectively.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } The concept of doping Mn 2+ ions into II-VI semiconductor nanocrystals (NCs) has recently extended to perovskite NCs. To date, most studies on Mn 2+ doped NCs focus on enhancing the emission related to the Mn 2 + dopant via an energy transfer mechanism. In this work, we found that the doping of Mn 2+ ions into CsPbCl 3 NCs not only results in a Mn 2+ -related orange emission, but also strongly influences the excitonic properties of the host NCs. We observe for the first time that Mn 2+ doping leads to the formation of Ruddlesden-Popper (R.P.) defects and thus induces quantum confinement within the host NCs. We find that a slight doping with Mn 2+ ions improves the size distribution of the NCs, which results in a prominent excitonic peak. However, with increasing the Mn 2+ concentration, the number of R.P. planes increases leading to smaller single crystal domains. The thus enhanced confinement and crystal inhomogeneity cause a gradual blue shift and broadening of the excitonic transition, respectively. |
| 25. | T Scholz, F Pielnhofer, R Eger, B V Lotsch Lanthanide orthothiophosphates revisited: single-crystal X-ray, Raman, and DFT studies of TmPS4 and YbPS4 Journal Article Zeitschrift für Naturforschung B, 75 , 2020. Links | Tags: Foundry Inorganic @article{, title = {Lanthanide orthothiophosphates revisited: single-crystal X-ray, Raman, and DFT studies of TmPS4 and YbPS4}, author = {T Scholz and F Pielnhofer and R Eger and B V Lotsch}, doi = {10.1515/znb-2019-0217}, year = {2020}, date = {2020-01-28}, journal = {Zeitschrift f\"{u}r Naturforschung B}, volume = {75}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 24. | M Däntl, P Ganter, K Szendrei-Temesi, A Jiménez-Solano, B V Lotsch Customizing H3Sb3P2O14 nanosheet sensors by reversible vapor-phase amine intercalation Journal Article Nanoscale Horizons, 5 (1), pp. 74-81, 2020, ISSN: 2055-6756. Abstract | Links | Tags: Foundry Inorganic @article{, title = {Customizing H3Sb3P2O14 nanosheet sensors by reversible vapor-phase amine intercalation}, author = {M D\"{a}ntl and P Ganter and K Szendrei-Temesi and A Jim\'{e}nez-Solano and B V Lotsch}, url = {http://dx.doi.org/10.1039/C9NH00434C}, doi = {10.1039/C9NH00434C}, issn = {2055-6756}, year = {2020}, date = {2020-01-01}, journal = {Nanoscale Horizons}, volume = {5}, number = {1}, pages = {74-81}, abstract = {Harvesting the large property space of 2D materials and their molecular-level fine-tuning is of utmost importance for future applications such as miniaturized sensors for environmental monitoring or biomedical detection. Therefore, developing straightforward strategies for the reversible and gradual fine-tuning of nanosheet properties with soft chemical intercalation methods is in high demand. Herein we address this challenge by customizing the host\textendashguest interactions of nanosheets based on the solid acid H3Sb3P2O14 by vapor-phase amine-intercalation with primary alkylamines. Fine-tuning of the structural and chemical properties of the intercalated nanosheets is achieved by applying a two-step, post-synthetic intercalation strategy via the vapor phase. The method allows for the gradual and reversible replacement of one amine type by another. Hence, fine-tuning of the d-spacing in the sub-r{A} regime is accomplished and offers exquisite control of the properties of the thin films such as refractive index, polarity, film thickness and sensitivity towards solvent vapors. Moreover, we employ amine replacement to pattern thin films by locally resolved amine intercalation and subsequent washing, leading to spatially dependent property profiles. This process thus adds a new vapor-phase, amine-based variant to the toolbox of soft lithography.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } Harvesting the large property space of 2D materials and their molecular-level fine-tuning is of utmost importance for future applications such as miniaturized sensors for environmental monitoring or biomedical detection. Therefore, developing straightforward strategies for the reversible and gradual fine-tuning of nanosheet properties with soft chemical intercalation methods is in high demand. Herein we address this challenge by customizing the host–guest interactions of nanosheets based on the solid acid H3Sb3P2O14 by vapor-phase amine-intercalation with primary alkylamines. Fine-tuning of the structural and chemical properties of the intercalated nanosheets is achieved by applying a two-step, post-synthetic intercalation strategy via the vapor phase. The method allows for the gradual and reversible replacement of one amine type by another. Hence, fine-tuning of the d-spacing in the sub-Å regime is accomplished and offers exquisite control of the properties of the thin films such as refractive index, polarity, film thickness and sensitivity towards solvent vapors. Moreover, we employ amine replacement to pattern thin films by locally resolved amine intercalation and subsequent washing, leading to spatially dependent property profiles. This process thus adds a new vapor-phase, amine-based variant to the toolbox of soft lithography. |
| 23. | J Klein, A Kerelsky, M Lorke, M Florian, F Sigger, J Kiemle, M C Reuter, T Taniguchi, K Watanabe, J J Finley, A N Pasupathy, A W Holleitner, F M Ross, U Wurstbauer Impact of substrate induced band tail states on the electronic and optical properties of MoS2 Journal Article Applied Physics Letters, 115 (26), 2019, ISSN: 0003-6951. Links | Tags: Foundry Inorganic @article{, title = {Impact of substrate induced band tail states on the electronic and optical properties of MoS2}, author = {J Klein and A Kerelsky and M Lorke and M Florian and F Sigger and J Kiemle and M C Reuter and T Taniguchi and K Watanabe and J J Finley and A N Pasupathy and A W Holleitner and F M Ross and U Wurstbauer}, url = {<Go to ISI>://WOS:000505613600019}, doi = {10.1063/1.5131270}, issn = {0003-6951}, year = {2019}, date = {2019-12-30}, journal = {Applied Physics Letters}, volume = {115}, number = {26}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 22. | A Haffner, A K Hatz, C Hoch, B V Lotsch, D Johrendt Synthesis and Structure of the Sodium Phosphidosilicate Na2SiP2 Journal Article European Journal of Inorganic Chemistry, 2019, ISSN: 1434-1948. Links | Tags: Foundry Inorganic @article{, title = {Synthesis and Structure of the Sodium Phosphidosilicate Na2SiP2}, author = {A Haffner and A K Hatz and C Hoch and B V Lotsch and D Johrendt}, url = {<Go to ISI>://WOS:000511390500001}, doi = {10.1002/ejic.201901083}, issn = {1434-1948}, year = {2019}, date = {2019-12-29}, journal = {European Journal of Inorganic Chemistry}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 21. | A M Ferrenti, S Klemenz, S M Lei, X Y Song, P Ganter, B V Lotsch, L M Schoop Change in Magnetic Properties upon Chemical Exfoliation of FeOCl Journal Article Inorganic Chemistry, 59 (2), pp. 1176-1182, 2019, ISSN: 0020-1669. Links | Tags: Foundry Inorganic @article{, title = {Change in Magnetic Properties upon Chemical Exfoliation of FeOCl}, author = {A M Ferrenti and S Klemenz and S M Lei and X Y Song and P Ganter and B V Lotsch and L M Schoop}, url = {<Go to ISI>://WOS:000509420100027}, doi = {10.1021/acs.inorgchem.9b02856}, issn = {0020-1669}, year = {2019}, date = {2019-12-27}, journal = {Inorganic Chemistry}, volume = {59}, number = {2}, pages = {1176-1182}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 20. | S Zhang, L Diehl, S Wrede, B V Lotsch, C Scheu Structural Evolution of Ni-Based Co-Catalysts on [Ca2Nb3O10]− Nanosheets during Heating and Their Photocatalytic Properties Journal Article Catalysts, 10 (1), pp. 13, 2019, ISSN: 2073-4344. Links | Tags: Foundry Inorganic @article{, title = {Structural Evolution of Ni-Based Co-Catalysts on [Ca2Nb3O10]− Nanosheets during Heating and Their Photocatalytic Properties}, author = {S Zhang and L Diehl and S Wrede and B V Lotsch and C Scheu}, url = {https://www.mdpi.com/2073-4344/10/1/13}, issn = {2073-4344}, year = {2019}, date = {2019-12-20}, journal = {Catalysts}, volume = {10}, number = {1}, pages = {13}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 19. | Y Negrín-Montecelo, M Comesaña-Hermo, L K Khorashad, A Sousa-Castillo, Z Wang, M Pérez-Lorenzo, T Liedl, A O Govorov, M A Correa-Duarte ACS Energy Letters, pp. 395-402, 2019. Links | Tags: Foundry Inorganic, Molecularly-Functionalized @article{, title = {Photophysical Effects behind the Efficiency of Hot Electron Injection in Plasmon-Assisted Catalysis: The Joint Role of Morphology and Composition}, author = {Y Negr\'{i}n-Montecelo and M Comesa\~{n}a-Hermo and L K Khorashad and A Sousa-Castillo and Z Wang and M P\'{e}rez-Lorenzo and T Liedl and A O Govorov and M A Correa-Duarte}, url = {https://doi.org/10.1021/acsenergylett.9b02478}, doi = {10.1021/acsenergylett.9b02478}, year = {2019}, date = {2019-12-12}, journal = {ACS Energy Letters}, pages = {395-402}, keywords = {Foundry Inorganic, Molecularly-Functionalized}, pubstate = {published}, tppubtype = {article} } |
| 18. | S Fust, A Faustmann, D J Carrad, J Bissinger, B Loitsch, M Döblinger, J Becker, G Abstreiter, J J Finley, G Koblmüller Quantum-Confinement-Enhanced Thermoelectric Properties in Modulation-Doped GaAs–AlGaAs Core–Shell Nanowires Journal Article Advanced Materials, 32 (4), pp. 1905458, 2019, ISSN: 0935-9648. Abstract | Links | Tags: Foundry Inorganic, Molecularly-Functionalized @article{, title = {Quantum-Confinement-Enhanced Thermoelectric Properties in Modulation-Doped GaAs\textendashAlGaAs Core\textendashShell Nanowires}, author = {S Fust and A Faustmann and D J Carrad and J Bissinger and B Loitsch and M D\"{o}blinger and J Becker and G Abstreiter and J J Finley and G Koblm\"{u}ller}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201905458}, doi = {10.1002/adma.201905458}, issn = {0935-9648}, year = {2019}, date = {2019-12-09}, journal = {Advanced Materials}, volume = {32}, number = {4}, pages = {1905458}, abstract = {Abstract Nanowires (NWs) hold great potential in advanced thermoelectrics due to their reduced dimensions and low-dimensional electronic character. However, unfavorable links between electrical and thermal conductivity in state-of-the-art unpassivated NWs have, so far, prevented the full exploitation of their distinct advantages. A promising model system for a surface-passivated one-dimensional (1D)-quantum confined NW thermoelectric is developed that enables simultaneously the observation of enhanced thermopower via quantum oscillations in the thermoelectric transport and a strong reduction in thermal conductivity induced by the core\textendashshell heterostructure. High-mobility modulation-doped GaAs/AlGaAs core\textendashshell NWs with thin (sub-40 nm) GaAs NW core channel are employed, where the electrical and thermoelectric transport is characterized on the same exact 1D-channel. 1D-sub-band transport at low temperature is verified by a discrete stepwise increase in the conductance, which coincided with strong oscillations in the corresponding Seebeck voltage that decay with increasing sub-band number. Peak Seebeck coefficients as high as ≈65\textendash85 µV K−1 are observed for the lowest sub-bands, resulting in equivalent thermopower of S2σ ≈ 60 µW m−1 K−2 and S2G ≈ 0.06 pW K−2 within a single sub-band. Remarkably, these core\textendashshell NW heterostructures also exhibit thermal conductivities as low as ≈3 W m−1 K−1, about one order of magnitude lower than state-of-the-art unpassivated GaAs NWs.}, keywords = {Foundry Inorganic, Molecularly-Functionalized}, pubstate = {published}, tppubtype = {article} } Abstract Nanowires (NWs) hold great potential in advanced thermoelectrics due to their reduced dimensions and low-dimensional electronic character. However, unfavorable links between electrical and thermal conductivity in state-of-the-art unpassivated NWs have, so far, prevented the full exploitation of their distinct advantages. A promising model system for a surface-passivated one-dimensional (1D)-quantum confined NW thermoelectric is developed that enables simultaneously the observation of enhanced thermopower via quantum oscillations in the thermoelectric transport and a strong reduction in thermal conductivity induced by the core–shell heterostructure. High-mobility modulation-doped GaAs/AlGaAs core–shell NWs with thin (sub-40 nm) GaAs NW core channel are employed, where the electrical and thermoelectric transport is characterized on the same exact 1D-channel. 1D-sub-band transport at low temperature is verified by a discrete stepwise increase in the conductance, which coincided with strong oscillations in the corresponding Seebeck voltage that decay with increasing sub-band number. Peak Seebeck coefficients as high as ≈65–85 µV K−1 are observed for the lowest sub-bands, resulting in equivalent thermopower of S2σ ≈ 60 µW m−1 K−2 and S2G ≈ 0.06 pW K−2 within a single sub-band. Remarkably, these core–shell NW heterostructures also exhibit thermal conductivities as low as ≈3 W m−1 K−1, about one order of magnitude lower than state-of-the-art unpassivated GaAs NWs. |
| 17. | T W He, K Reuter, A J Du Atomically dispersed asymmetric Cu-B pair on 2D carbon nitride synergistically boosts the conversion of CO into C-2 products Journal Article Journal of Materials Chemistry A, 8 (2), pp. 599-606, 2019, ISSN: 2050-7488. Links | Tags: Foundry Inorganic @article{, title = {Atomically dispersed asymmetric Cu-B pair on 2D carbon nitride synergistically boosts the conversion of CO into C-2 products}, author = {T W He and K Reuter and A J Du}, url = {<Go to ISI>://WOS:000505561500008}, doi = {10.1039/c9ta12090d}, issn = {2050-7488}, year = {2019}, date = {2019-12-09}, journal = {Journal of Materials Chemistry A}, volume = {8}, number = {2}, pages = {599-606}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 16. | D A Duncan, P S Deimel, A Wiengarten, M Paszkiewicz, P C Aguilar, R G Acres, F Klappenberger, W Auwarter, A P Seitsonen, J V Barth, F Allegretti Bottom-Up Fabrication of a Metal-Supported Oxo-Metal Porphyrin Journal Article Journal of Physical Chemistry C, 123 (51), pp. 31011-31025, 2019, ISSN: 1932-7447. Links | Tags: Foundry Inorganic @article{, title = {Bottom-Up Fabrication of a Metal-Supported Oxo-Metal Porphyrin}, author = {D A Duncan and P S Deimel and A Wiengarten and M Paszkiewicz and P C Aguilar and R G Acres and F Klappenberger and W Auwarter and A P Seitsonen and J V Barth and F Allegretti}, url = {<Go to ISI>://WOS:000505632900028}, doi = {10.1021/acs.jpcc.9b08661}, issn = {1932-7447}, year = {2019}, date = {2019-11-25}, journal = {Journal of Physical Chemistry C}, volume = {123}, number = {51}, pages = {31011-31025}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 15. | S Rieger, B J Bohn, M Doblinger, A F Richter, Y Tong, K Wang, P Muller-Buschbaum, L Polavarapu, L Leppert, J K Stolarczyk, J Feldmann Excitons and narrow bands determine the optical properties of cesium bismuth halides Journal Article Physical Review B, 100 (20), 2019, ISSN: 2469-9950. Links | Tags: Foundry Inorganic, Solid-Solid @article{, title = {Excitons and narrow bands determine the optical properties of cesium bismuth halides}, author = {S Rieger and B J Bohn and M Doblinger and A F Richter and Y Tong and K Wang and P Muller-Buschbaum and L Polavarapu and L Leppert and J K Stolarczyk and J Feldmann}, url = {<Go to ISI>://WOS:000498055800001}, doi = {10.1103/PhysRevB.100.201404}, issn = {2469-9950}, year = {2019}, date = {2019-11-20}, journal = {Physical Review B}, volume = {100}, number = {20}, keywords = {Foundry Inorganic, Solid-Solid}, pubstate = {published}, tppubtype = {article} } |
| 14. | D Bohm, M Beetz, M Schuster, K Peters, A G Hufnagel, M Doblinger, B Boller, T Bein, D Fattakhova-Rohlfing Advanced Functional Materials, 30 (1), 2019, ISSN: 1616-301X. Links | Tags: Foundry Inorganic @article{, title = {Efficient OER Catalyst with Low Ir Volume Density Obtained by Homogeneous Deposition of Iridium Oxide Nanoparticles on Macroporous Antimony-Doped Tin Oxide Support}, author = {D Bohm and M Beetz and M Schuster and K Peters and A G Hufnagel and M Doblinger and B Boller and T Bein and D Fattakhova-Rohlfing}, url = {<Go to ISI>://WOS:000492384200001}, doi = {10.1002/adfm.201906670}, issn = {1616-301X}, year = {2019}, date = {2019-10-25}, journal = {Advanced Functional Materials}, volume = {30}, number = {1}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 13. | P Mao, C X Liu, Q Chen, M Han, S A Maier, S Zhang Broadband SERS detection with disordered plasmonic hybrid aggregates Journal Article Nanoscale, 12 (1), pp. 93-102, 2019, ISSN: 2040-3364. Links | Tags: Foundry Inorganic @article{, title = {Broadband SERS detection with disordered plasmonic hybrid aggregates}, author = {P Mao and C X Liu and Q Chen and M Han and S A Maier and S Zhang}, url = {<Go to ISI>://WOS:000504106900036}, doi = {10.1039/c9nr08118f}, issn = {2040-3364}, year = {2019}, date = {2019-10-14}, journal = {Nanoscale}, volume = {12}, number = {1}, pages = {93-102}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 12. | J Treu, X Xu, K Ott, K Saller, G Abstreiter, J J Finley, G Koblmüller Optical absorption of composition-tunable InGaAs nanowire arrays Journal Article Nanotechnology, 30 (49), pp. 495703, 2019, ISSN: 0957-4484 1361-6528. Abstract | Links | Tags: Foundry Inorganic, Molecularly-Functionalized @article{, title = {Optical absorption of composition-tunable InGaAs nanowire arrays}, author = {J Treu and X Xu and K Ott and K Saller and G Abstreiter and J J Finley and G Koblm\"{u}ller}, url = {http://dx.doi.org/10.1088/1361-6528/ab3ef7}, doi = {10.1088/1361-6528/ab3ef7}, issn = {0957-4484 1361-6528}, year = {2019}, date = {2019-09-20}, journal = {Nanotechnology}, volume = {30}, number = {49}, pages = {495703}, abstract = {InGaAs nanowire (NW) arrays have emerged as important active materials in future photovoltaic and photodetector applications, due to their excellent electronic properties and tunable band gap. Here, we report a systematic investigation of the optical absorption characteristics of composition-tunable vertical InGaAs NW arrays. Using finite-difference time-domain simulations we first study the effect of variable composition (Ga-molar fraction) and NW array geometry (NW diameter, period, fill factor) on the optical generation rate. NWs with typical diameters in the range of ∼100\textendash250 nm lead to generation rates higher than the equivalent bulk case for moderate fill factors (NW period of ∼0.3\textendash0.8 μm), while slightly smaller fill factors and increased diameters are required to maintain high generation rates at increased Ga-molar fraction. The optical absorption was further measured using spectrally resolved ultraviolet\textendashvisible-near-infrared (UV\textendashvis-NIR) spectroscopy on NW arrays transferred to transparent substrates. Interestingly, large variations in Ga-molar fraction (0 < x(Ga) < 0.5) have a negligible influence, while minute changes in NW diameter of less than ±20 nm affect the absorption spectra very strongly, leading to pronounced shifts in the peak absorption energies by more than ∼700 meV. These results clearly highlight the much larger sensitivity of the optical absorption behavior to geometric parameters rather than to variations in the electronic band gap of the underlying NW array.}, keywords = {Foundry Inorganic, Molecularly-Functionalized}, pubstate = {published}, tppubtype = {article} } InGaAs nanowire (NW) arrays have emerged as important active materials in future photovoltaic and photodetector applications, due to their excellent electronic properties and tunable band gap. Here, we report a systematic investigation of the optical absorption characteristics of composition-tunable vertical InGaAs NW arrays. Using finite-difference time-domain simulations we first study the effect of variable composition (Ga-molar fraction) and NW array geometry (NW diameter, period, fill factor) on the optical generation rate. NWs with typical diameters in the range of ∼100–250 nm lead to generation rates higher than the equivalent bulk case for moderate fill factors (NW period of ∼0.3–0.8 μm), while slightly smaller fill factors and increased diameters are required to maintain high generation rates at increased Ga-molar fraction. The optical absorption was further measured using spectrally resolved ultraviolet–visible-near-infrared (UV–vis-NIR) spectroscopy on NW arrays transferred to transparent substrates. Interestingly, large variations in Ga-molar fraction (0 < x(Ga) < 0.5) have a negligible influence, while minute changes in NW diameter of less than ±20 nm affect the absorption spectra very strongly, leading to pronounced shifts in the peak absorption energies by more than ∼700 meV. These results clearly highlight the much larger sensitivity of the optical absorption behavior to geometric parameters rather than to variations in the electronic band gap of the underlying NW array. |
| 11. | M Mallmann, R Niklaus, T Rackl, M Benz, T G Chau, D Johrendt, J Minár, W Schnick Chem. Eur. J., 25 , pp. 1-10, 2019, ISSN: 1521-3765. Abstract | Links | Tags: Foundry Inorganic @article{Mallmann2019, title = {Solid Solutions of Grimm\textendashSommerfeld Analogous Nitride Semiconductors II‐IV‐N2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations }, author = {M Mallmann and R Niklaus and T Rackl and M Benz and T G Chau and D Johrendt and J Min\'{a}r and W Schnick}, doi = {https://doi.org/10.1002/chem.201903897}, issn = {1521-3765}, year = {2019}, date = {2019-09-17}, journal = {Chem. Eur. J.}, volume = {25}, pages = {1-10}, abstract = {Grimm\textendashSommerfeld analogous II‐IV‐N2 nitrides such as ZnSiN2, ZnGeN2, and MgGeN2 are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II‐IV‐N2 compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula (IIa1−xIIbx)‐IV‐N2 with x≈0.5 and ab initio DFT calculations of their electronic and optical properties are presented. The ammonothermal reactions were conducted in custom‐built, high‐temperature, high‐pressure autoclaves by using the corresponding elements as starting materials. NaNH2 and KNH2 act as ammonobasic mineralizers that increase the solubility of the reactants in supercritical ammonia. Temperatures between 870 and 1070 K and pressures up to 200 MPa were chosen as reaction conditions. All solid solutions crystallize in wurtzite‐type superstructures with space group Pna21 (no. 33), confirmed by powder XRD. The chemical compositions were analyzed by energy‐dispersive X‐ray spectroscopy. Diffuse reflectance spectroscopy was used for estimation of optical bandgaps of all compounds, which ranged from 2.6 to 3.5 eV (Ge compounds) and from 3.6 to 4.4 eV (Si compounds), and thus demonstrated bandgap tunability between the respective boundary phases. Experimental findings were corroborated by DFT calculations of the electronic structure of pseudorelaxed mixed‐occupancy structures by using the KKR+CPA approach.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } Grimm–Sommerfeld analogous II‐IV‐N2 nitrides such as ZnSiN2, ZnGeN2, and MgGeN2 are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II‐IV‐N2 compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula (IIa1−xIIbx)‐IV‐N2 with x≈0.5 and ab initio DFT calculations of their electronic and optical properties are presented. The ammonothermal reactions were conducted in custom‐built, high‐temperature, high‐pressure autoclaves by using the corresponding elements as starting materials. NaNH2 and KNH2 act as ammonobasic mineralizers that increase the solubility of the reactants in supercritical ammonia. Temperatures between 870 and 1070 K and pressures up to 200 MPa were chosen as reaction conditions. All solid solutions crystallize in wurtzite‐type superstructures with space group Pna21 (no. 33), confirmed by powder XRD. The chemical compositions were analyzed by energy‐dispersive X‐ray spectroscopy. Diffuse reflectance spectroscopy was used for estimation of optical bandgaps of all compounds, which ranged from 2.6 to 3.5 eV (Ge compounds) and from 3.6 to 4.4 eV (Si compounds), and thus demonstrated bandgap tunability between the respective boundary phases. Experimental findings were corroborated by DFT calculations of the electronic structure of pseudorelaxed mixed‐occupancy structures by using the KKR+CPA approach. |
| 10. | J Langer, De D J Aberasturi, J Aizpurua, R A Alvarez-Puebla, B Auguie, J J Baumberg, G C Bazan, S E J Bell, A Boisen, A G Brolo, J Choo, D Cialla-May, V Deckert, L Fabris, K Faulds, De F J G Abajo, R Goodacre, D Graham, A J Haes, C L Haynes, C Huck, T Itoh, M Ka, J Kneipp, N A Kotov, H Kuang, Le E C Ru, H K Lee, J F Li, X Y Ling, S A Maier, T Mayerhofer, M Moskovits, K Murakoshi, J M Nam, S Nie, Y Ozaki, I Pastoriza-Santos, J Perez-Juste, J Popp, A Pucci, S Reich, B Ren, G C Schatz, T Shegai, S Schlucker, L L Tay, K G Thomas, Z Q Tian, Van R P Duyne, T Vo-Dinh, Y Wang, K A Willets, C Xu, H Xu, Y Xu, Y S Yamamoto, B Zhao, L M Liz-Marzan Present and Future of Surface-Enhanced Raman Scattering Journal Article Acs Nano, 14 (1), pp. 28-117, 2019, ISSN: 1936-0851. Links | Tags: Foundry Inorganic @article{, title = {Present and Future of Surface-Enhanced Raman Scattering}, author = {J Langer and De D J Aberasturi and J Aizpurua and R A Alvarez-Puebla and B Auguie and J J Baumberg and G C Bazan and S E J Bell and A Boisen and A G Brolo and J Choo and D Cialla-May and V Deckert and L Fabris and K Faulds and De F J G Abajo and R Goodacre and D Graham and A J Haes and C L Haynes and C Huck and T Itoh and M Ka and J Kneipp and N A Kotov and H Kuang and Le E C Ru and H K Lee and J F Li and X Y Ling and S A Maier and T Mayerhofer and M Moskovits and K Murakoshi and J M Nam and S Nie and Y Ozaki and I Pastoriza-Santos and J Perez-Juste and J Popp and A Pucci and S Reich and B Ren and G C Schatz and T Shegai and S Schlucker and L L Tay and K G Thomas and Z Q Tian and Van R P Duyne and T Vo-Dinh and Y Wang and K A Willets and C Xu and H Xu and Y Xu and Y S Yamamoto and B Zhao and L M Liz-Marzan}, url = {<Go to ISI>://WOS:000510531500006}, doi = {10.1021/acsnano.9b04224}, issn = {1936-0851}, year = {2019}, date = {2019-09-03}, journal = {Acs Nano}, volume = {14}, number = {1}, pages = {28-117}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 9. | D Graf, M Beuerle, C Ochsenfeld Low-Scaling Self-Consistent Minimization of a Density Matrix Based Random Phase Approximation Method in the Atomic Orbital Space Journal Article Journal of Chemical Theory and Computation, 15 (8), pp. 4468-4477, 2019, ISSN: 1549-9618. Links | Tags: Foundry Inorganic @article{, title = {Low-Scaling Self-Consistent Minimization of a Density Matrix Based Random Phase Approximation Method in the Atomic Orbital Space}, author = {D Graf and M Beuerle and C Ochsenfeld}, url = {<Go to ISI>://WOS:000480826800016}, doi = {10.1021/acs.jctc.9b00444}, issn = {1549-9618}, year = {2019}, date = {2019-08-01}, journal = {Journal of Chemical Theory and Computation}, volume = {15}, number = {8}, pages = {4468-4477}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 8. | M Blauth, G Vest, S L Rosemary, M Prechtl, O Hartwig, M Jurgensen, M Kaniber, A V Stier, J J Finley Ultracompact Photodetection in Atomically Thin MoSe2 Journal Article Acs Photonics, 6 (8), pp. 1902-1909, 2019, ISSN: 2330-4022. Links | Tags: Foundry Inorganic, Solid-Solid @article{, title = {Ultracompact Photodetection in Atomically Thin MoSe2}, author = {M Blauth and G Vest and S L Rosemary and M Prechtl and O Hartwig and M Jurgensen and M Kaniber and A V Stier and J J Finley}, url = {<Go to ISI>://WOS:000482545400012}, doi = {10.1021/acsphotonics.9b00785}, issn = {2330-4022}, year = {2019}, date = {2019-07-30}, journal = {Acs Photonics}, volume = {6}, number = {8}, pages = {1902-1909}, keywords = {Foundry Inorganic, Solid-Solid}, pubstate = {published}, tppubtype = {article} } |
| 7. | V A Hintermayr, C Lampe, M Low, J Roemer, W Vanderlinden, M Gramlich, A X Bohm, C Sattler, B Nickel, T Lohmuller, A S Urban Polymer Nanoreactors Shield Perovskite Nanocrystals from Degradation Journal Article Nano Letters, 19 (8), pp. 4928-4933, 2019, ISSN: 1530-6984. Links | Tags: Foundry Inorganic, Solid-Solid @article{, title = {Polymer Nanoreactors Shield Perovskite Nanocrystals from Degradation}, author = {V A Hintermayr and C Lampe and M Low and J Roemer and W Vanderlinden and M Gramlich and A X Bohm and C Sattler and B Nickel and T Lohmuller and A S Urban}, url = {<Go to ISI>://WOS:000481563800015}, doi = {10.1021/acs.nanolett.9b00982}, issn = {1530-6984}, year = {2019}, date = {2019-07-19}, journal = {Nano Letters}, volume = {19}, number = {8}, pages = {4928-4933}, keywords = {Foundry Inorganic, Solid-Solid}, pubstate = {published}, tppubtype = {article} } |
| 6. | Y X Li, H Huang, Y Xiong, A F Richter, S V Kershaw, J Feldmann, A L Rogach Using Polar Alcohols for the Direct Synthesis of Cesium Lead Halide Perovskite Nanorods with Anisotropic Emission Journal Article Acs Nano, 13 (7), pp. 8237-8245, 2019, ISSN: 1936-0851. Links | Tags: Foundry Inorganic @article{, title = {Using Polar Alcohols for the Direct Synthesis of Cesium Lead Halide Perovskite Nanorods with Anisotropic Emission}, author = {Y X Li and H Huang and Y Xiong and A F Richter and S V Kershaw and J Feldmann and A L Rogach}, url = {<Go to ISI>://WOS:000477786400088}, doi = {10.1021/acsnano.9b03508}, issn = {1936-0851}, year = {2019}, date = {2019-07-11}, journal = {Acs Nano}, volume = {13}, number = {7}, pages = {8237-8245}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 5. | J Klein, M Lorke, M Florian, F Sigger, L Sigl, S Rey, J Wierzbowski, J Cerne, K Müller, E Mitterreiter, P Zimmermann, T Taniguchi, K Watanabe, U Wurstbauer, M Kaniber, M Knap, R Schmidt, J J Finley, A W Holleitner Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation Journal Article Nature Communications, 10 (1), pp. 2755, 2019, ISSN: 2041-1723. Abstract | Links | Tags: Foundry Inorganic @article{, title = {Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation}, author = {J Klein and M Lorke and M Florian and F Sigger and L Sigl and S Rey and J Wierzbowski and J Cerne and K M\"{u}ller and E Mitterreiter and P Zimmermann and T Taniguchi and K Watanabe and U Wurstbauer and M Kaniber and M Knap and R Schmidt and J J Finley and A W Holleitner}, url = {https://doi.org/10.1038/s41467-019-10632-z}, doi = {10.1038/s41467-019-10632-z}, issn = {2041-1723}, year = {2019}, date = {2019-06-21}, journal = {Nature Communications}, volume = {10}, number = {1}, pages = {2755}, abstract = {Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum photonic technologies. The ability to tailor quantum emitters via site-selective defect engineering is essential for realizing scalable architectures. However, a major difficulty is that defects need to be controllably positioned within the material. Here, we overcome this challenge by controllably irradiating monolayer MoS2 using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion exposed MoS2 flake with high-quality hBN reveals spectrally narrow emission lines that produce photons in the visible spectral range. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron\textendashhole complexes at defect states generated by the local helium ion exposure. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and interacting exciton lattices that may allow the exploration of Hubbard physics.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum photonic technologies. The ability to tailor quantum emitters via site-selective defect engineering is essential for realizing scalable architectures. However, a major difficulty is that defects need to be controllably positioned within the material. Here, we overcome this challenge by controllably irradiating monolayer MoS2 using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion exposed MoS2 flake with high-quality hBN reveals spectrally narrow emission lines that produce photons in the visible spectral range. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron–hole complexes at defect states generated by the local helium ion exposure. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and interacting exciton lattices that may allow the exploration of Hubbard physics. |
| 4. | A Vogel, T Miller, C Hoch, M Jakob, O Oeckler, T Nilges Cu9.1Te4Cl3: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity Journal Article Inorganic Chemistry, 58 (9), pp. 6222-6230, 2019, ISSN: 0020-1669. Abstract | Links | Tags: Foundry Inorganic @article{, title = {Cu9.1Te4Cl3: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity}, author = {A Vogel and T Miller and C Hoch and M Jakob and O Oeckler and T Nilges}, url = {https://doi.org/10.1021/acs.inorgchem.9b00453}, doi = {10.1021/acs.inorgchem.9b00453}, issn = {0020-1669}, year = {2019}, date = {2019-05-06}, journal = {Inorganic Chemistry}, volume = {58}, number = {9}, pages = {6222-6230}, abstract = {Cu9.1Te4Cl3 is a new polymorphic compound in the class of coinage metal polytelluride halides. Copper is highly mobile, which results in multiple order\textendashdisorder phase transitions in a limited temperature interval from 240 to 370 K. Mainly as a consequence of thermal transport properties, the compound’s thermoelectric figure of merit reaches values up to ZT = 0.15 in the temperature range between room temperature and 523 K. Its structure is closely related to that of Ag10Te4Br3, another coinage metal polytelluride halide, which represents the first p\textendashn\textendashp-switchable semiconductor approachable by a simple temperature change. The title compound outperforms Ag10Te4Br3 in terms of thermoelectric properties by 1 order of magnitude and therefore acts as a link between the class of p\textendashn\textendashp compounds and thermoelectric materials.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } Cu9.1Te4Cl3 is a new polymorphic compound in the class of coinage metal polytelluride halides. Copper is highly mobile, which results in multiple order–disorder phase transitions in a limited temperature interval from 240 to 370 K. Mainly as a consequence of thermal transport properties, the compound’s thermoelectric figure of merit reaches values up to ZT = 0.15 in the temperature range between room temperature and 523 K. Its structure is closely related to that of Ag10Te4Br3, another coinage metal polytelluride halide, which represents the first p–n–p-switchable semiconductor approachable by a simple temperature change. The title compound outperforms Ag10Te4Br3 in terms of thermoelectric properties by 1 order of magnitude and therefore acts as a link between the class of p–n–p compounds and thermoelectric materials. |
| 3. | J A Sichert, A Hemmerling, C Cardenas-Daw, A S Urban, J Feldmann Tuning the optical bandgap in layered hybrid perovskites through variation of alkyl chain length Journal Article Apl Materials, 7 (4), 2019, ISSN: 2166-532X. Links | Tags: Foundry Inorganic, Solid-Solid @article{, title = {Tuning the optical bandgap in layered hybrid perovskites through variation of alkyl chain length}, author = {J A Sichert and A Hemmerling and C Cardenas-Daw and A S Urban and J Feldmann}, url = {<Go to ISI>://WOS:000466615300017}, doi = {10.1063/1.5087296}, issn = {2166-532X}, year = {2019}, date = {2019-04-16}, journal = {Apl Materials}, volume = {7}, number = {4}, keywords = {Foundry Inorganic, Solid-Solid}, pubstate = {published}, tppubtype = {article} } |
| 2. | W Chen, J L Zhong, J Z Li, N Saxena, L P Kreuzer, H C Liu, L Song, B Su, D Yang, K Wang, J Schlipf, V Korstgens, T C He, K Wang, P Muller-Buschbaum Structure and Charge Carrier Dynamics in Colloidal PbS Quantum Dot Solids Journal Article Journal of Physical Chemistry Letters, 10 (9), pp. 2058-2065, 2019, ISSN: 1948-7185. Links | Tags: Foundry Inorganic @article{, title = {Structure and Charge Carrier Dynamics in Colloidal PbS Quantum Dot Solids}, author = {W Chen and J L Zhong and J Z Li and N Saxena and L P Kreuzer and H C Liu and L Song and B Su and D Yang and K Wang and J Schlipf and V Korstgens and T C He and K Wang and P Muller-Buschbaum}, url = {<Go to ISI>://WOS:000466991300006}, doi = {10.1021/acs.jpclett.9b00869}, issn = {1948-7185}, year = {2019}, date = {2019-04-09}, journal = {Journal of Physical Chemistry Letters}, volume = {10}, number = {9}, pages = {2058-2065}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } |
| 1. | C Ott, F Reiter, M Baumgartner, M Pielmeier, A Vogel, P Walke, S Burger, M Ehrenreich, G Kieslich, D Daisenberger, J Armstrong, U K Thakur, P Kumar, S Chen, D Donadio, L S Walter, R T Weitz, K Shankar, T Nilges Flexible and Ultrasoft Inorganic 1D Semiconductor and Heterostructure Systems Based on SnIP Journal Article Advanced Functional Materials, 29 (18), pp. 1900233, 2019, ISSN: 1616-301X. Abstract | Links | Tags: Foundry Inorganic @article{, title = {Flexible and Ultrasoft Inorganic 1D Semiconductor and Heterostructure Systems Based on SnIP}, author = {C Ott and F Reiter and M Baumgartner and M Pielmeier and A Vogel and P Walke and S Burger and M Ehrenreich and G Kieslich and D Daisenberger and J Armstrong and U K Thakur and P Kumar and S Chen and D Donadio and L S Walter and R T Weitz and K Shankar and T Nilges}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201900233}, doi = {10.1002/adfm.201900233}, issn = {1616-301X}, year = {2019}, date = {2019-03-13}, journal = {Advanced Functional Materials}, volume = {29}, number = {18}, pages = {1900233}, abstract = {Abstract Low dimensionality and high flexibility are key demands for flexible electronic semiconductor devices. SnIP, the first atomic-scale double helical semiconductor combines structural anisotropy and robustness with exceptional electronic properties. The benefit of the double helix, combined with a diverse structure on the nanoscale, ranging from strong covalent bonding to weak van der Waals interactions, and the large structure and property anisotropy offer substantial potential for applications in energy conversion and water splitting. It represents the next logical step in downscaling the inorganic semiconductors from classical 3D systems, via 2D semiconductors like MXenes or transition metal dichalcogenides, to the first downsizeable, polymer-like atomic-scale 1D semiconductor SnIP. SnIP shows intriguing mechanical properties featuring a bulk modulus three times lower than any IV, III-V, or II-VI semiconductor. In situ bending tests substantiate that pure SnIP fibers can be bent without an effect on their bonding properties. Organic and inorganic hybrids are prepared illustrating that SnIP is a candidate to fabricate flexible 1D composites for energy conversion and water splitting applications. SnIP@C3N4 hybrid forms an unusual soft material core\textendashshell topology with graphenic carbon nitride wrapping around SnIP. A 1D van der Waals heterostructure is formed capable of performing effective water splitting.}, keywords = {Foundry Inorganic}, pubstate = {published}, tppubtype = {article} } Abstract Low dimensionality and high flexibility are key demands for flexible electronic semiconductor devices. SnIP, the first atomic-scale double helical semiconductor combines structural anisotropy and robustness with exceptional electronic properties. The benefit of the double helix, combined with a diverse structure on the nanoscale, ranging from strong covalent bonding to weak van der Waals interactions, and the large structure and property anisotropy offer substantial potential for applications in energy conversion and water splitting. It represents the next logical step in downscaling the inorganic semiconductors from classical 3D systems, via 2D semiconductors like MXenes or transition metal dichalcogenides, to the first downsizeable, polymer-like atomic-scale 1D semiconductor SnIP. SnIP shows intriguing mechanical properties featuring a bulk modulus three times lower than any IV, III-V, or II-VI semiconductor. In situ bending tests substantiate that pure SnIP fibers can be bent without an effect on their bonding properties. Organic and inorganic hybrids are prepared illustrating that SnIP is a candidate to fabricate flexible 1D composites for energy conversion and water splitting applications. SnIP@C3N4 hybrid forms an unusual soft material core–shell topology with graphenic carbon nitride wrapping around SnIP. A 1D van der Waals heterostructure is formed capable of performing effective water splitting. |
Publications2020-03-26T14:18:16+01:00