@article{,
title = {Ultrafast Photoconductivity and Terahertz Vibrational Dynamics in Double-Helix SnIP Nanowires},
author = {D N Purschke and M R P Pielmeier and E \"{U}zer and C Ott and C Jensen and A Degg and A Vogel and N Amer and T Nilges and F A Hegmann},
url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202100978},
doi = {https://doi.org/10.1002/adma.202100978},
issn = {0935-9648},
year = {2021},
date = {2021-07-19},
journal = {Advanced Materials},
volume = {n/a},
number = {n/a},
pages = {2100978},
abstract = {Abstract Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm2  V−1s−1 along the double-helix axis and a hole mobility of 238 cm2  V−1 s−1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 1018 cm−3. The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{,
title = {Visualizing the Atomic Structure Between YSZ and LSM: An Interface Stabilized by Complexions?},
author = {T G\"{o}tsch and H Tuerk and F-P Schmidt and I Vinke and De L B Haart and R Schl\"{o}gl and K Reuter and R-A Eichel and A Knop-Gericke and C Scheurer},
issn = {1938-5862},
year = {2021},
date = {2021-07-12},
journal = {ECS Transactions},
volume = {103},
number = {1},
pages = {1331},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{,
title = {1,10-Phenanthroline as an Efficient Bifunctional Passivating Agent for MAPbI3 Perovskite Solar Cells},
author = {A Buyruk and D Bl\"{a}tte and M G\"{u}nther and M A Scheel and N F Hartmann and M D\"{o}blinger and A Weis and A Hartschuh and P M\"{u}ller-Buschbaum and T Bein and T Ameri},
url = {https://doi.org/10.1021/acsami.1c05055},
doi = {10.1021/acsami.1c05055},
issn = {1944-8244},
year = {2021},
date = {2021-07-09},
journal = {ACS Applied Materials & Interfaces},
abstract = {Passivation is one of the most promising concepts to heal defects created at the surface and grain boundaries of polycrystalline perovskite thin films, which significantly deteriorate the photovoltaic performance and stability of corresponding devices. Here, 1,10-phenanthroline, known as a bidentate chelating ligand, is implemented between the methylammonium lead iodide (MAPbI3) film and the hole-transport layer for both passivating the lead-based surface defects (undercoordinated lead ions) and converting the excess/unreacted lead iodide (PbI2) buried at interfaces, which is problematic for the long-term stability, into “neutralized” and beneficial species (PbI2(1,10-phen)x},
keywords = {},
pubstate = {published},
tppubtype = {article}
}